Tunnel Magnetoresistance for Phonon-Assisted Tunneling through Quantum Dots
نویسنده
چکیده
Spin-polarized transport through a single-level quantum dot interacting with a local phonon mode is studied in the frame of the nonequilibrium Green-function technique. It is shown that strong electron–phonon interaction gives rise to a significant current suppression, to additional resonance peaks in the differential conductance as well as to oscillations of the tunnel magnetoresistance. Also, a phonon-induced mechanism leading to a minimum in tunnel magnetoresistance at zero bias voltage is explained.
منابع مشابه
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